Method of measuring gas introducing hole provided in electrode for plasma etching device, electrode, electrode regeneration method, regenerated electrode, plasma etching device, and gas introducing hole state distribution diagram and display method for same
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United States of America Patent
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Jun 9, 2020
Grant Date -
May 25, 2017
app pub date -
Dec 25, 2015
filing date -
Dec 26, 2014
priority date (Note) -
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status (Latency Note)
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Abstract
A method of measuring with which it is possible to measure with a high accuracy a gas introducing hole provided in an electrode for a plasma etching device, and to provide an electrode provided with a highly-accurate gas introducing hole is described. This method is provided to penetrate through in the thickness direction of a base material of the electrode for the plasma etching device, provided with: a step of radiating light toward the gas introducing hole from one surface side of the substrate; a step of acquiring a two-dimensional image of light which has passed through the gas introducing hole to the other surface side of the substrate; and a step of measuring at least one of the diameter, the inner wall surface roughness, and the degree of verticality of the gas introducing hole, on the basis of the two dimensional image.
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International Classification(s)
- H01J:ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- C23C:COATING METALLIC MATERIAL; COATING MATERIAL WITH M....
- H01L:SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICE....
- G01N:INVESTIGATING OR ANALYSING MATERIALS BY DETERMININ....
- H05H:PLASMA TECHNIQUE
- G01B:MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIME....
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