Semiconductor substrate, epitaxial wafer, and method for manufacturing epitaxial wafer
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United States of America Patent
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Jun 9, 2020
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May 25, 2017
app pub date -
May 11, 2015
filing date -
May 9, 2014
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Abstract
A semiconductor substrate for being used as a base substrate for epitaxial crystal growth by HVPE method includes a β-Ga2O3-based single crystal, and a principal surface that is a plane parallel to a [010] axis of the β-Ga2O3-based single crystal. An epitaxial wafer includes the semiconductor substrate, and an epitaxial layer that includes a β-Ga2O3-based single crystal and is formed on the principal surface of the semiconductor substrate by epitaxial crystal growth using the HVPE method. A method for manufacturing the epitaxial wafer includes forming the epitaxial layer by epitaxial crystal growth using the HVPE method on the semiconductor substrate.
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