METHOD OF ELECTROPLATING LOW INTERNAL STRESS COPPER DEPOSITS ON THIN FILM SUBSTRATES TO INHIBIT WARPING
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United States of America Patent
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Issued Date -
May 25, 2017
app pub date -
Oct 17, 2016
filing date -
Nov 19, 2015
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Abstract
Thin film substrates are electroplated with copper from low internal stress, high ductility acid copper electroplating baths. During the copper electroplating process the thin film substrates can warp or bow. To address the problem of warping or bowing during copper electroplating the thin film substrate is held by a securing means which inhibits the thin film substrate from excessive activity.
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