CARBON NANOTUBE INTERLAYER, MANUFACTURING METHOD THEREOF, AND THIN FILM TRANSISTOR USING THE SAME

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United States of America Patent

SERIAL NO

15309800

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Abstract

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The present invention relates to a carbon nanotube interlayer, a manufacturing method thereof, and a thin film transistor using the same. More specifically, the present invention provides a carbon nanotube interlayer, a manufacturing method thereof, and a thin film transistor using the same, where the carbon nanotube interlayer is a layer constituting an organic thin film transistor and comprising a conjugated polymer and a single-walled carbon nanotube between an organic semiconductor layer and a source/drain electrode. The conjugated polymer selectively wraps the single-walled carbon nanotube having semiconducting properties.

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Patent Owner(s)

Patent OwnerAddress
DONGGUK UNIVERSITY INDUSTRY-ACADEMIC COOPERATION FOUNDATION30 PILDONG-RO 1-GIL JUNG-GU SEOUL 04620 04620

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
NOH, Yong Young Daejeon, KR 7 14

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