MEMORY STRUCTURE
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Nov 17, 2015
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Nov 17, 2015
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The present invention relates to a memory structure, which includes a dielectric layer between the top and bottom electrodes and further includes an iridium oxide film between the top electrode and the dielectric layer. With the iridium oxide film, the number of the metal particles in the electrodes diffusing to the dielectric layer in ion form or the number of oxygen vacancies in the memory can be controlled. Thereby, the operating voltage/current of the memory can be lowered and switching uniformity/reliability will be improved.
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