Heterojunction oxide non-volatile memory device
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United States of America Patent
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May 18, 2017
app pub date -
Dec 2, 2016
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Aug 14, 2009
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Abstract
A memory device includes a first metal layer and a first metal oxide layer coupled to the first metal layer. The memory device includes a second metal oxide layer coupled to the first metal oxide layer and a second metal layer coupled to the second metal oxide layer. The formation of the first metal oxide layer has a Gibbs free energy that is lower than the Gibbs free energy for the formation of the second metal oxide layer.
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