Light Emitting Diodes and Fabrication Method

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United States of America Patent

SERIAL NO

15418708

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A light emitting diode (LED) includes quantum dots serving as the quantum well layer in the multiple-quantum well (MQW) structure, which can greatly improve the combination efficiency of electrons and holes due to quantum confinement effect; a nanoscale metal reflective layer is formed between the quantum barrier layer with nanoscale pits to instantly reflect the light emitted downwards from the MQW to the front of epitaxial structure; in addition, the nanoscale metal reflective layer can form surface plasmon to further improve light emitting efficiency.

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Patent Owner(s)

Patent OwnerAddress
XIAMEN SANAN OPTOELECTRONICS TECHNOLOGY CO LTD241000 ANHUI CITY OF WUHU PROVINCE ECONOMIC AND TECHNOLOGICAL DEVELOPMENT ZONE DONG LIANG ROAD NO 8 WUHU CITY ANHUI PROVINCE 241000

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
CHOU, Chilun Xiamen, CN 4 0
DENG, Heqing Xiamen, CN 8 1
DU, Weihua Xiamen, CN 19 7
KANG, Junyong Xiamen, CN 15 6
LI, Shuiqing Xiamen, CN 17 5
LI, Zhiming Xiamen, CN 80 594
WU, Mingyue Xiamen, CN 9 0
XUN, Feilin Xiamen, CN 5 3
ZHENG, Jiansen Xiamen, CN 34 173
ZHENG, Jinjian Xiamen, CN 15 4

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