MULTI-JUNCTION OPTOELECTRONIC DEVICE WITH GROUP IV SEMICONDUCTOR AS A BOTTOM JUNCTION

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United States of America Patent

APP PUB NO 20170141256A1
SERIAL NO

15417105

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Abstract

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A multi-junction optoelectronic device and method of manufacture are disclosed. The method comprises providing a first p-n structure on a substrate, wherein the first p-n structure comprises a first base layer of a first semiconductor with a first bandgap such that a lattice constant of the first semiconductor matches a lattice constant of the substrate, and wherein the first semiconductor comprises a Group III-V semiconductor. The method includes providing a second p-n structure, wherein the second p-n structure comprises a second base layer of a second semiconductor with a second bandgap, wherein a lattice constant of the second semiconductor matches a lattice constant of the first semiconductor, and wherein the second semiconductor comprises a Group IV semiconductor. The method also includes lifting off the substrate the multi-junction optoelectronic device having the first p-n structure and the second p-n structure, wherein the multi-junction optoelectronic device is a flexible device.

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Patent Owner(s)

Patent OwnerAddress
UTICA LEASECO LLC ASSIGNEE905 SOUTH BOULEVARD EAST ROCHESTER HILLS MI 48307

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
HE, Gang Cupertino, US 333 3799
KAYES, Brendan M Los Gatos, US 39 297

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