OXIDE SEMICONDUCTOR SUBSTRATE AND SCHOTTKY BARRIER DIODE

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United States of America Patent

SERIAL NO

15392540

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Abstract

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A Schottky barrier diode element includes an n-type or p-type silicon (Si) substrate, an oxide semiconductor layer, and a Schottky electrode layer, the oxide semiconductor layer including either or both of a polycrystalline oxide that includes gallium (Ga) as the main component and an amorphous oxide that includes gallium (Ga) as the main component.

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Patent Owner(s)

Patent OwnerAddress
IDEMITSU KOSAN CO LTD2-1 OTEMACHI 1-CHOME CHIYODA-KU TOKYO 100-8321

International Classification(s)

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  • 2016 Application Filing Year
  • H01L Class
  • 27971 Applications Filed
  • 23507 Patents Issued To-Date
  • 84.05 % Issued To-Date
Click to zoom InYear of Issuance% of Matters IssuedCumulative IssuancesYearly Issuances20162017201820192020202120222023202420250255075100

Inventor(s)

Inventor Name Address # of filed Patents Total Citations
HAYASAKA, Hiromi Sodegaura-shi, JP 4 28
KAWASHIMA, Emi Sodegaura-shi, JP 18 59
SHIBATA, Masatoshi Sodegaura-shi, JP 45 291
TOMAI, Shigekazu Sodegaura-shi, JP 57 1357
YANO, Koki Sodegaura-shi, JP 85 4057

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  • 1 Citation Count
  • H01L Class
  • 18.50 % this patent is cited more than
  • 8 Age
Citation count rangeNumber of patents cited in rangeNumber of patents cited in various citation count ranges26979357140748325312788503629173801 - 1011 - 2021 - 3031 - 4041 - 5051 - 6061 - 7071 - 8081 - 9091 - 100100 +050010001500200025003000350040004500500055006000650070007500800085009000950010000

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