SEMICONDUCTOR SUBSTRATE AND SEMICONDUCTOR DEVICE
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United States of America Patent
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Mar 5, 2015
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Apr 9, 2014
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Abstract
A semiconductor substrate including: substrate; buffer layer provided on substrate; high-resistance layer provided on buffer layer, high-resistance layer being composed of nitride-based semiconductor and containing transition metal and carbon; and channel layer provided on high-resistance layer, channel layer being composed of nitride-based semiconductor, wherein high-resistance layer includes reduction layer in contact with channel layer, reduction layer being layer in which concentration of transition metal is reduced from side where buffer layer is located toward side where channel layer is located, and reduction rate at which carbon concentration is reduced toward channel layer is higher than reduction rate at which concentration of transition metal is reduced toward channel layer. As a result, it is possible to provide a semiconductor substrate that can make higher resistance of region of high-resistance layer on side where channel layer is located while reducing carbon concentration and transition metal concentration in channel layer.
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