GaAs/GaAs(1-x-y)SbxNy CORE-SHELL NANOWIRES
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Nov 4, 2016
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Nov 6, 2015
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In one aspect, compositions comprising Group III-V nanowires, and methods of making such nanowires, are described herein. In some embodiments, a composition described herein comprises one or more core-shell nanowires comprising a core and a first shell surrounding or substantially surrounding the core. The core is formed from GaAs, and the first shell is formed from GaAs(1-x-y)SbxNy. Additionally, x is 0.08-0.15, and y is 0.005-0.035. In some cases, x is 0.10-0.17, and/or y is 0.01-0.02. Further, the nanowires have an average emission maximum of 1.25-1.35 μm. Moreover, in some instances, the nanowires further comprise a second shell surrounding or substantially surrounding the first shell. The second shell, in some embodiments, is formed from a Group III-V material such as GaAs. For example, in some instances, the nanowires have the structure GaAs/GaAs(0.82-0.9)Sb(0.09-0.15)N(0.005-0.033)/GaAs.
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