MAGNETIC MEMORY ELEMENT AND STORAGE DEVICE USING THE SAME

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United States of America Patent

SERIAL NO

15402552

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ATTORNEY / AGENT: (SPONSORED)

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Abstract

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A magnetic miniaturized memory element with improved thermal stability of magnetization includes a first magnetic layer, an insulating layer that is formed on the first magnetic layer, a second magnetic layer that is formed on the insulating layer, and an expanded interlayer insulating film that comes into contact with side surfaces of the first and second magnetic layers, where at least one of the first magnetic layer and the second magnetic layer is strained and deformed so as to be elongated in an easy magnetization axis direction of the first magnetic layer or the second magnetic layer or compressive strain remains in any direction in the plane of at least one of the first magnetic layer and the second magnetic layer.

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Patent Owner(s)

Patent OwnerAddress
III HOLDINGS 3 LLC2711 CENTERVILLE RD SUITE 400 WILMINGTON DE 19808

International Classification(s)

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  • 2017 Application Filing Year
  • H01L Class
  • 30754 Applications Filed
  • 25260 Patents Issued To-Date
  • 82.14 % Issued To-Date
Click to zoom InYear of Issuance% of Matters IssuedCumulative IssuancesYearly Issuances2017201820192020202120222023202420250255075100

Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Ogimoto, Yasushi Higashiyamato-city, JP 47 451
Yamada, Michiya Hino-city, JP 15 242

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Patent Citation Ranking

  • 3 Citation Count
  • H01L Class
  • 18.50 % this patent is cited more than
  • 8 Age
Citation count rangeNumber of patents cited in rangeNumber of patents cited in various citation count ranges26979357140748325312788503629173801 - 1011 - 2021 - 3031 - 4041 - 5051 - 6061 - 7071 - 8081 - 9091 - 100100 +050010001500200025003000350040004500500055006000650070007500800085009000950010000

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