Ultraviolet light-emitting device
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United States of America Patent
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Mar 6, 2018
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N/A
app pub date -
Jan 12, 2017
filing date -
Apr 12, 2013
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Abstract
Disclosed is an ultraviolet light-emitting device. The light-emitting device includes: an n-type contact layer including a GaN layer; a p-type contact layer including an AlGaN or AlInGaN layer; and an active region of multiple quantum well structure positioned between the n-type contact layer and the p-type contact layer. In addition, the active region of multiple quantum well structure includes a GaN or InGaN layer with a thickness less than 2 nm, radiating an ultraviolet ray with a peak wavelength of 340 nm to 360 nm.
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