Wide Bandgap Junction Barrier Schottky Diode With Silicon Bypass
Number of patents in Portfolio can not be more than 2000
United States of America Patent
Stats
-
N/A
Issued Date -
N/A
app pub date -
Oct 25, 2016
filing date -
Oct 29, 2015
priority date (Note) -
Published
status (Latency Note)
Importance
Abstract
A silicon surge bypass diode is co-packaged with a high bandgap junction barrier Schottky diode. The co-packaged diodes may be used in a power circuits such as power factor correction circuits, converters, inverters circuit, motor drives, and protection circuits, for example. The high bandgap diode may be made of silicon carbide, gallium nitride, aluminum nitride, aluminum gallium nitride, and/or diamond, for example. The high bandgap diode may be formed by diode connecting a transistor, such as a high-electron-mobility transistor (HEMT). The high bandgap diode may be much smaller than the silicon diode. The package may have a common terminal for the diode cathodes, and separate terminals for the anodes of each diode.
First Claim
Family
International Classification(s)
Cited Art Landscape
Patent Citation Ranking
Recipient Email Address
Recipient Email Address
Comment
Recipient Email Address
Add to Portfolio(s)
To add this patent to one, or more, of your portfolios, simply click the add button.
This Patent is in these Portfolios:
Add to additional portfolios:
Last Refreshed On:
Changes done successfully