Semiconductor device

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United States of America Patent

PATENT NO 9865535
SERIAL NO

15346176

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Abstract

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A semiconductor device includes a planar interconnection layer formed on a substrate and made of a semiconductor, a first pillar-shaped semiconductor layer formed on the interconnection layer, a semiconductor-metal compound layer formed so as to cover the entire upper surface of the interconnection layer except for a bottom portion of the first pillar-shaped semiconductor layer, a first gate insulating film surrounding the first pillar-shaped semiconductor layer, a first gate electrode surrounding the first gate insulating film, and a first gate line connected to the first gate electrode.

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Patent Owner(s)

Patent OwnerAddress
UNISANTIS ELECTRONICS SINGAPORE PTE LTDSINGAPORE 179098

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Harada, Nozomu Tokyo, JP 261 1653
Masuoka, Fujio Tokyo, JP 412 6771
Nakamura, Hiroki Tokyo, JP 382 4527

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