METHOD FOR MANUFACTURING SEMICONDUCTOR AND METHOD FOR CLEANING WAFER SUBSTRATE

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United States of America Patent

SERIAL NO

15300432

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Abstract

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An object of the present invention is to provide a method for manufacturing a semiconductor, including a step of removing a photoresist present on a patterned wafer substrate and having a hardened modified layer, which is difficult to remove, formed on at least part of a top portion easily and effectively under mild conditions, and a method for cleaning a wafer substrate, including the above step. The method for manufacturing a semiconductor of the present invention as a means for resolution is characterized by comprising a step of bringing a patterned wafer substrate, on which a photoresist having a hardened modified layer formed on at least part of a top portion is present, into contact with a carbon dioxide dissolved water containing ozone-containing microbubbles, thereby removing the photoresist. In addition, the method for cleaning a wafer substrate of the present invention is characterized by comprising the above step.

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Patent Owner(s)

Patent OwnerAddress
NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGYTOKYO 100-8921

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
IIDA, Junichi Yokohama-shi, JP 95 2451
TAKAHASHI, Masayoshi Tsukuba-shi, JP 112 1671
TAKAHASHI, Tsunejiro Yokohama-shi, JP 6 30
TATERA, Katsumi Yokohama-shi, JP 1 2

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