SURFACE TREATMENT METHOD FOR SiC SUBSTRATES, SiC SUBSTRATE, AND SEMICONDUCTOR PRODUCTION METHOD
Number of patents in Portfolio can not be more than 2000
United States of America Patent
Stats
-
N/A
Issued Date -
May 4, 2017
app pub date -
Mar 10, 2015
filing date -
Mar 31, 2014
priority date (Note) -
Published
status (Latency Note)
Importance
Abstract
When a SiC substrate (40) after performing mechanical treatment is heat-treated under SiC atmosphere to etch the SiC substrate (40), the etching rate is controlled by adjusting the inert gas pressure around the periphery of the SiC substrate (40). As a result, when latent scratches or the like exist in the SiC substrate (40), the latent scratches or the like can be removed. Accordingly, the surface of the SiC substrate (40) does not become rough, even if epitaxial growth and heat treatment and the like are performed. This can manufacture high-quality SiC substrates.
First Claim
Family
International Classification(s)
- [Classification Symbol]
- [Patents Count]
Cited Art Landscape
Patent Citation Ranking
Recipient Email Address
Recipient Email Address
Comment
Recipient Email Address
Add to Portfolio(s)
To add this patent to one, or more, of your portfolios, simply click the add button.
This Patent is in these Portfolios:
Add to additional portfolios:
Last Refreshed On:
Changes done successfully