Resistive Random Access Memory
Number of patents in Portfolio can not be more than 2000
United States of America Patent
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N/A
Issued Date -
N/A
app pub date -
Dec 3, 2015
filing date -
Oct 26, 2015
priority date (Note) -
Abandoned
status (Latency Note)
Importance
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Abstract
A resistive random access memory overcomes the difficulty in reducing the forming voltage thereof. The resistive random access memory includes a first electrode layer, a separating portion, a lateral wall portion, an oxygen-containing rheostatic layer and a second electrode layer. The separating portion is arranged on the first electrode layer and forms a through-hole. The first electrode layer is exposed via the through-hole. The lateral wall portion is annularly arranged on an inner periphery of the separating portion defining the through-hole. The lateral wall portion is connected to the first electrode layer and includes a first dielectric. The oxygen-containing rheostatic layer covers the first electrode layer, the separating portion and the lateral wall portion. The oxygen-containing rheostatic layer includes a second dielectric smaller than the first dielectric. The second electrode layer is arranged on the oxygen-containing rheostatic layer. In this structure, the difficulty can be effectively overcome.
First Claim
Other Claims data not available
Family
| Country | kind | publication No. | Filing Date |
|---|---|---|---|
| TW | B | TWI559452 | Oct 26, 2015 |
International Classification(s)
- 2015 Application Filing Year
- H01L Class
- 25498 Applications Filed
- 22451 Patents Issued To-Date
- 88.06 % Issued To-Date
Cited Art Landscape
Patent Citation Ranking
- 0 Citation Count
- H01L Class
- 0 % this patent is cited more than
- 8 Age