METHOD FOR FORMATION OF VERTICAL CYLINDRICAL GaN QUANTUM WELL TRANSISTOR
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United States of America Patent
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Mar 22, 2016
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Oct 27, 2015
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Abstract
The present invention provides a method for forming a quantum well device having high mobility and high breakdown voltage with enhanced performance and reliability. A method for fabrication of a Vertical Cylindrical GaN Quantum Well Power Transistor for high power application is disclosed. Compared with the prior art, the method of forming a quantum well device disclosed in the present invention has the beneficial effects of high mobility and high breakdown voltage with better performance and reliability.
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