SEMICONDUCTOR LIGHT EMITTING ELEMENT, PRODUCTION METHOD THEREFOR, LED ELEMENT AND ELECTRON-BEAM-PUMPED LIGHT SOURCE DEVICE

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United States of America Patent

APP PUB NO 20170110630A1
SERIAL NO

15129181

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Abstract

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This method for producing a semiconductor light emitting element includes: a step (a) of preparing a growth substrate; a step (b) of growing a first layer made of Alx1Gay1In1-x1-y1N (0 direction; a step (c) of forming a groove portion extending along a <11-20> direction of the first layer with respect to the first layer with such a depth that a surface of the growth substrate is not exposed; a step (d) of growing a second layer made of Alx2Gay2In1-x2-y2N (0

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Patent Owner(s)

Patent OwnerAddress
USHIO DENKI KABUSHIKI KAISHA1-6-5 MARUNOUCHI CHIYODA-KU TOKYO 100-8150

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
FUNATO, Mitsuru Kyoto-shi, JP 9 162
KATAOKA, Ken Tokyo, JP 7 16
KAWAKAMI, Yoichi Kyoto-shi, JP 22 496
YAMAGUCHI, Masanori Himeji-shi, JP 55 482

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