SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE CAPABLE OF REDUCING A LEAKAGE CURRENT
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United States of America Patent
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app pub date -
Feb 23, 2016
filing date -
Oct 19, 2015
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Abstract
A semiconductor integrated circuit device may include a semiconductor substrate, a source pattern, a drain pattern, a nano wire pattern and a gate. The source pattern may be formed on an upper surface of the semiconductor substrate. The drain pattern may be formed on the upper surface of the semiconductor substrate. The drain pattern may be spaced apart from the source pattern. The nano wire pattern may be arranged between the source pattern and the drain pattern. The gate may be configured to surround the nano wire pattern. The nano wire pattern may include an inner wire and an outer wire. The inner wire may include a first semiconductor material. The outer wire may include a second semiconductor material having a band gap greater than a band gap of the first semiconductor material. The outer inner may be formed on an outer surface of the inner wire.
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