Trench MOSFET with self-aligned body contact with spacer
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United States of America Patent
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Jan 26, 2021
Grant Date -
Apr 20, 2017
app pub date -
Sep 13, 2016
filing date -
Oct 19, 2015
priority date (Note) -
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Abstract
Trench MOSFET with self-aligned body contact with spacer. In accordance with an embodiment of the present invention, a semiconductor device includes a semiconductor substrate, and at least two gate trenches formed in the semiconductor substrate. Each of the trenches comprises a gate electrode. The semiconductor device also includes a body contact trench formed in the semiconductor substrate between the gate trenches. The body contact trench has a lower width at the bottom of the body contact trench and an ohmic body contact implant beneath the body contact trench. The horizontal extent of the ohmic body contact implant is not greater than the lower width of the body contact trench.
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