METHODS FOR MINIMIZING SIDEWALL DAMAGE DURING LOW K ETCH PROCESSES
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United States of America Patent
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Apr 20, 2017
app pub date -
Dec 31, 2016
filing date -
Dec 31, 2016
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Abstract
Methods for minimizing sidewall damage during low k etch processes are disclosed. The methods etch the low k layers using the plasma activated vapor of an organofluorine compound having a formula selected from the group consisting of N≡C—R; (N≡C—)—(R)—(—C≡N); Rx[—C═N(Rz)]y; and R(3-a)—N—Ha, wherein a=1-2, x=1-2, y=1-2, z=0-1, x+z=1-3, and each R independently has the formula HaFbCc with a=0-11, b=0-11, and c=0-5.
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