Multi-Step Atomic Layer Deposition Process for Silicon Nitride Film Formation
Number of patents in Portfolio can not be more than 2000
United States of America Patent
Stats
-
N/A
Issued Date -
Apr 20, 2017
app pub date -
Oct 12, 2016
filing date -
Oct 16, 2015
priority date (Note) -
Published
status (Latency Note)
Importance
Abstract
One or more silicon nitride layers are deposited onto a substrate by exposing the surface of the substrate to radicals to activate the surface of the substrate. A silicon-containing first precursor with a high sticking coefficient is injected onto the substrate. A second precursor including molecules each having at least two Si atoms is injected onto the substrate. The first precursor has a higher sticking coefficient than the second precursor. The substrate is treated with nitrogen radicals N* to form multiple layers of silicon nitride per radical exposure. This results in high-quality silicon nitride films with high deposition rate.
First Claim
Family
International Classification(s)
Cited Art Landscape
Patent Citation Ranking
Recipient Email Address
Recipient Email Address
Comment
Recipient Email Address
Add to Portfolio(s)
To add this patent to one, or more, of your portfolios, simply click the add button.
This Patent is in these Portfolios:
Add to additional portfolios:
Last Refreshed On:
Changes done successfully