Nitride semiconductor device with asymmetric electrode tips
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United States of America Patent
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Apr 13, 2017
app pub date -
Oct 9, 2015
filing date -
Oct 9, 2015
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Abstract
Nitride semiconductor devices having interdigitated array source and drain electrodes arranged like crossed fingers are described. The electric fields extended at the tips of the array electrodes are relaxed. Desirably, the rounded source electrode tip ends have a larger effective diameter than the rounded tip ends of the drain electrodes. Devices constructed accordingly have higher withstand voltages.
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