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Abstract

Disclosed is an effective programming method for non-volatile flash memory including memory cells, each formed of a select transistor and a floating transistor. The method includes imposing a positive voltage onto a control gate of the floating transistor as a word line, supplying a zero voltage to a triple well, a deep N well, and a select gate of the select transistor to turn off the select transistor, and finally providing a moderate positive voltage to a drain of the control transistor. Owing to the junction band-to-band tunneling effect, the electron of the hole-electron pair generated between the junction of the bit line and the triple well leaps to the floating gate of the floating transistor driven by the positive electric field to form a higher threshold voltage for the memory cell such that the process of programming is accomplished.

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First Claim