METHOD OF FORMING PATTERN
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United States of America Patent
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app pub date -
Dec 21, 2016
filing date -
Aug 25, 2010
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Abandoned
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Abstract
Provided is a method of forming pattern including (a) forming a chemically amplified resist composition into a film, (b) exposing the film to light, and (c) developing the exposed film with a developer containing a first organic solvent, wherein in the developer, particles each having a diameter of 0.3 μm or greater amount to a density of 30 particles/ml or less.
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