TRANSITION METAL DICHALCOGENIDE-BASED SPINTRONICS DEVICES
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United States of America Patent
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Apr 6, 2017
app pub date -
Oct 3, 2016
filing date -
Oct 2, 2015
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Abstract
Transition metal dichalcogenide (TMD)-based spintronics devices, each including a TMD thin film layer, a first gate electrode, a first insulating layer sandwiched between the TMD thin film layer and the first gate electrode, a second gate electrode, and a second insulating layer sandwiched between the TMD thin film layer and the second gate electrode. Such a device, when also including a source electrode and a drain electrode, functions as a spin filter. On the other hand, when also including one source electrode and two drain electrode terminals, such a device functions as a spin separator. Also disclosed are methods of using the above-described TMD-based spintronics devices.
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