OXIDE SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF
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United States of America Patent
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app pub date -
Oct 1, 2015
filing date -
Oct 1, 2015
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Abstract
A manufacturing method of an oxide semiconductor device includes the following steps. An interposer substrate is provided. At least one oxide semiconductor transistor is formed on the interposer substrate. At least one trough silicon via (TSV) is formed in the interposer substrate. An interconnection structure on the interposer substrate, and the at least one oxide semiconductor transistor is connected to the interconnection structure.
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