METHOD AND APPARATUS FOR IMPROVING YIELD FOR NON-VOLATILE MEMORY

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United States of America Patent

APP PUB NO 20170098478A1
SERIAL NO

14873486

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Abstract

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A method, apparatus and computer program product are provided in order to test word line failure of a non-volatile memory device. An example of the method includes performing a failure screening of the non-volatile memory device, wherein the non-volatile memory device comprises one or more word lines; identifying a point of failure located between a first word line and a second word line; and marking the first word line and the second word line as a single word line in response to identifying the point of failure between the first word line and the second word line.

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Patent Owner(s)

Patent OwnerAddress
MACRONIX INTERNATIONAL CO LTDNO 16 LI-HSIN RD SCIENCE-BASED INDUSTRIAL PARK HSINCHU

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Cheng, Cheng-Hsien Yunlin County, TW 28 244
Ku, Shaw-Hung Hsinchu City, TW 24 247
Lee, Chih-Wei New Taipei City, TW 65 344
Lu, Wen-Pin Hsinchu County, TW 31 330

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