PHOTONIC SEMICONDUCTOR DEVICE FOR ENHANCED PROPAGATION OF RADIATION AND METHOD OF PRODUCING SUCH A SEMICONDUCTOR DEVICE
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United States of America Patent
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Apr 23, 2015
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May 22, 2014
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Abstract
The semiconductor device comprises a semiconductor substrate (2), a transition layer (5) in or on the semiconductor substrate, the transition layer allowing propagation of incident radiation (7) according to a refractive index, and a photonic component (4) facing the transition layer. A surface (6) of the transition layer is structured such that the effective refractive index is gradually changed through the transition layer with changing distance from the photonic component.
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