FILM FORMING METHOD, SEMICONDUCTOR DEVICE MANUFACTURING METHOD, AND SEMICONDUCTOR DEVICE
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United States of America Patent
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app pub date -
Mar 9, 2015
filing date -
Mar 31, 2014
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Abstract
A film forming method according to a first embodiment includes a formation step of forming wiring in a groove and/or a hole formed in an insulating film containing fluorine by using wiring metal containing a dopant for preventing intrusion of the fluorine from the insulating film. The film forming method according to a first embodiment further includes a step of performing heat treatment after the wiring is formed, whereby a high concentration portion containing the dopant in a concentration higher than inside the wiring is formed on an interface of the wiring.
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