High Temperature Spectrally Selective Thermal Emitter
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United States of America Patent
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Issued Date -
Mar 23, 2017
app pub date -
May 7, 2015
filing date -
May 12, 2014
priority date (Note) -
Published
status (Latency Note)
Importance
Abstract
The present invention enables elective emission from a heterogeneous metasurface that can survive repeated temperature cycling at high temperatures (e.g., greater than 1300 K). Simulations, fabrication and characterization were performed for an exemplary cross-over-a-backplane metasurface consisting of platinum and alumina layers on a sapphire substrate. The structure was stabilized for high temperature operation by an encapsulating alumina layer. The geometry was optimized for integration into a thermophotovoltaic (TPV) system and was designed to have its emissivity matched to the external quantum efficiency spectrum of 0.6 eV InGaAs TPV material. Spectral measurements of the metasurface resulted in a predicted 32% optical-to-electrical power conversion efficiency. The broadly adaptable selective emitter design can be easily scaled for integration with TPV systems.
First Claim
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