SEMICONDUCTOR LIGHT-EMITTING ELEMENT AND PRODUCTION METHOD THEREFOR
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United States of America Patent
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Mar 23, 2017
app pub date -
Mar 10, 2015
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Mar 17, 2014
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Abstract
The purpose of the present invention is to provide a semiconductor light-emitting element with further enhanced light extraction efficiency while ensuring horizontal widening of current flowing through an active layer. This method for producing a semiconductor light-emitting element according to the present invention includes: a step (a) for forming a semiconductor layer including an active layer on an upper layer of a growth substrate; a step (b) for forming a first metal layer on a top surface of the semiconductor layer; a step (c) for forming a second metal layer on a portion of a top surface of the first metal layer without preforming annealing after the step (b); and a step (d) for performing annealing after the step (c).
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