Methods for Forming High-K Dielectric Materials with Tunable Properties
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United States of America Patent
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Mar 23, 2017
app pub date -
Sep 14, 2016
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Sep 17, 2015
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Abstract
Embodiments provided herein describe methods and systems for forming high-k dielectric materials, as well as devices that utilize such materials. A property of a high-k dielectric material is selected. A value of the selected property of the high-k dielectric material is selected. A chemical composition of the high-k dielectric material is selected from a plurality of chemical compositions of the high-k dielectric material. The selected chemical composition of the high-k dielectric material includes an amount of nitridation associated with the selected value of the selected property of the high-k dielectric material. The high-k dielectric material is formed with the selected chemical composition.
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