MEMORY CELL WITH OXIDE SEMICONDUCTOR FIELD EFFECT TRANSISTOR DEVICE INTEGRATED THEREIN
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United States of America Patent
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Issued Date -
Mar 23, 2017
app pub date -
Sep 17, 2015
filing date -
Sep 17, 2015
priority date (Note) -
Abandoned
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Abstract
A memory cell includes a substrate, a deep trench (DT) capacitor formed in the substrate, at least an insulting layer formed on the substrate, and an oxide semiconductor field effect transistor (OS FET) device formed on the insulating layer. And more important, the OS FET device is electrically connected to the DT capacitor.
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