MEMS DEVICE, SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME

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United States of America Patent

APP PUB NO 20170081176A1
SERIAL NO

14981461

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Abstract

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The invention provides a MEMS device, semiconductor device, and method for manufacturing the same. The MEMS device comprises an enclosed cavity, the cavity having an inner wall extending in a first plane, the inner wall including a film deposition region for depositing a getter film, wherein one or more grooves are formed in the film deposition region, the angle between the sidewalls of the grooves and the first plane is more than 0° and less than 180°, and the getter film overlays the sidewall of the grooves. The invention can form the getter film in a smaller incident flux angle with a common sputtering, evaporation apparatus, that is, form the porous, high roughness getter.

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Patent Owner(s)

Patent OwnerAddress
HANGZHOU SILAN MICROELECTRONICS CO LTD310012 NO 4 HUANG SHAN ROAD ZHEJIANG HANGZHOU HANGZHOU CITY ZHEJIANG PROVINCE 310012
HANGZHOU SILAN INTEGRATED CIRCUIT CO LTD310018 NO 10 NO 308 EAST ROAD HANGZHOU ECONOMIC AND TECHNOLOGICAL DEVELOPMENT ZONE HANGZHOU ZHEJIANG HANGZHOU CITY ZHEJIANG PROVINCE 310018

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
JI, Feng Hangzhou, CN 46 85
LIU, Chen Hangzhou, CN 236 1493
WEN, Yongxiang Hangzhou, CN 8 18
ZHOU, Hao Hangzhou, CN 295 2054

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