MEMS DEVICE, SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME
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United States of America Patent
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Issued Date -
Mar 23, 2017
app pub date -
Dec 28, 2015
filing date -
Sep 22, 2015
priority date (Note) -
Published
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Abstract
The invention provides a MEMS device, semiconductor device, and method for manufacturing the same. The MEMS device comprises an enclosed cavity, the cavity having an inner wall extending in a first plane, the inner wall including a film deposition region for depositing a getter film, wherein one or more grooves are formed in the film deposition region, the angle between the sidewalls of the grooves and the first plane is more than 0° and less than 180°, and the getter film overlays the sidewall of the grooves. The invention can form the getter film in a smaller incident flux angle with a common sputtering, evaporation apparatus, that is, form the porous, high roughness getter.

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- 15 United States
- 10 France
- 8 Japan
- 7 China
- 5 Korea
- 2 Other
Patent Owner(s)
Patent Owner | Address | |
---|---|---|
HANGZHOU SILAN MICROELECTRONICS CO LTD | 310012 NO 4 HUANG SHAN ROAD ZHEJIANG HANGZHOU HANGZHOU CITY ZHEJIANG PROVINCE 310012 | |
HANGZHOU SILAN INTEGRATED CIRCUIT CO LTD | 310018 NO 10 NO 308 EAST ROAD HANGZHOU ECONOMIC AND TECHNOLOGICAL DEVELOPMENT ZONE HANGZHOU ZHEJIANG HANGZHOU CITY ZHEJIANG PROVINCE 310018 |
International Classification(s)
Inventor(s)
Inventor Name | Address | # of filed Patents | Total Citations |
---|---|---|---|
JI, Feng | Hangzhou, CN | 46 | 85 |
LIU, Chen | Hangzhou, CN | 236 | 1493 |
WEN, Yongxiang | Hangzhou, CN | 8 | 18 |
ZHOU, Hao | Hangzhou, CN | 295 | 2054 |
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11.5 Year Payment | $7400.00 | $3700.00 | $1850.00 | Sep 23, 2028 |
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Surcharge - 11.5 year - Late payment within 6 months | $160.00 | $80.00 | $40.00 |
Surcharge after expiration - Late payment is unavoidable | $700.00 | $350.00 | $175.00 |
Surcharge after expiration - Late payment is unintentional | $1,640.00 | $820.00 | $410.00 |
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