Needle Field Plate MOSFET with Mesa Contacts and Conductive Posts
Number of patents in Portfolio can not be more than 2000
United States of America Patent
Stats
-
N/A
Issued Date -
Mar 16, 2017
app pub date -
Sep 11, 2015
filing date -
Sep 11, 2015
priority date (Note) -
Published
status (Latency Note)
Importance
Abstract
There are disclosed herein various implementations of a vertical metal-oxide-semiconductor field-effect transistor (MOSFET). Such a vertical MOSFET includes a semiconductor substrate having a drift region situated over a drain, a gate trench and needle field plates extending into the drift region, and source regions situated in respective mesas. In addition, the vertical MOSFET includes mesa contacts having a first width and extending through a first pre-metal dielectric layer to make electrical contact with the mesas. A second pre-metal dielectric layer is situated over the first pre-metal dielectric layer and the mesa contacts. The vertical MOSFET further includes conductive posts having a second width less than the first width and extending through the second pre-metal dielectric layer to make electrical contact with the mesa contacts.
First Claim
Family
International Classification(s)
Cited Art Landscape
Patent Citation Ranking
Recipient Email Address
Recipient Email Address
Comment
Recipient Email Address
Add to Portfolio(s)
To add this patent to one, or more, of your portfolios, simply click the add button.
This Patent is in these Portfolios:
Add to additional portfolios:
Last Refreshed On:
Changes done successfully