METHOD OF MANUFACTURING MAGNETORESISTIVE MEMORY DEVICE
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United States of America Patent
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Mar 9, 2017
app pub date -
Mar 9, 2016
filing date -
Sep 9, 2015
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Abstract
According to one embodiment, a method of manufacturing a magnetoresistive memory device includes forming a base substrate including a conductive electrode exposed at a part of a surface, forming a stacked layer structure for a magnetoresistive element on the base substrate, processing the stacked layer structure by etching and thereby forming the magnetoresistive element on the electrode, and exposing the magnetoresistive element to an atmosphere of oxygen radicals.
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