IRIDIUM SILICIDE STRUCTURES AND METHODS
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United States of America Patent
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Issued Date -
Mar 9, 2017
app pub date -
Sep 1, 2016
filing date -
Sep 3, 2015
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Abstract
An iridium silicide structure, devices made from iridium silicide structures, and associated methods are shown. Example devices include iridium silicide structures formed on a (110) surface of a silicon substrate. After formation of the iridium silicide structures, any number of possible electronic devices may be formed, including, but not limited to IR detectors and FinFET devices.
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