Gate-grounded metal oxide semiconductor device
Number of patents in Portfolio can not be more than 2000
United States of America Patent
Stats
-
Jan 16, 2018
Issued Date -
N/A
app pub date -
Sep 9, 2015
filing date -
Sep 9, 2015
priority date (Note) -
In Force
status (Latency Note)
Importance
Loading Importance Indicators... 
Abstract
A gate-grounded metal oxide semiconductor (GGMOS) device is disclosed. The GGMOS is an n-type (GGNMOS) transistor used as an electrostatic discharge (ESD) protection device. The GGMOS includes a base extension region under an elevated source. The elevated source and base extension regions increase Leff and reduce beta, increasing performance of the ESD protection.
First Claim
Other Claims data not available
Family
Loading Family data...
International Classification(s)
- 2015 Application Filing Year
- H01L Class
- 25498 Applications Filed
- 22451 Patents Issued To-Date
- 88.06 % Issued To-Date
Cited Art Landscape
Patent Citation Ranking
- 1 Citation Count
- H01L Class
- 23.71 % this patent is cited more than
- 7 Age
Maintenance Fees
| Fee | Large entity fee | small entity fee | micro entity fee | due date |
|---|---|---|---|---|
| 7.5 Year Payment | $3600.00 | $1800.00 | $900.00 | Jul 16, 2025 |
| 11.5 Year Payment | $7400.00 | $3700.00 | $1850.00 | Jul 16, 2029 |
