Mask blank, method of manufacturing phase shift mask, phase shift mask, and method of manufacturing semiconductor device
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United States of America Patent
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Oct 2, 2018
Grant Date -
Mar 9, 2017
app pub date -
Feb 24, 2015
filing date -
Mar 28, 2014
priority date (Note) -
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Abstract
A mask blank having a structure in which, on a transparent substrate, a light shielding film and a hard mask film are laminated in the stated order from the transparent substrate side. The hard mask film is formed of a material containing at least one element selected from silicon and tantalum, and the light shielding film is formed of a material containing chromium. The mask blank has a structure of three layers wherein a lower layer, an intermediate layer, and an upper layer are laminated in the stated order from the transparent substrate side. The upper layer has a lowest content of chromium in the light shielding film, the intermediate layer has a highest content of chromium in the light shielding film. It contains at least one metallic element selected from indium, tin, and molybdenum.
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