PRODUCTION METHOD OF EPITAXIAL SILICON WAFER, VAPOR DEPOSITION EQUIPMENT AND VALVE
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United States of America Patent
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Mar 9, 2017
app pub date -
Sep 2, 2016
filing date -
Sep 9, 2015
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Abstract
A method for producing an epitaxial silicon wafer comprises applying a vapor deposition on a silicon wafer to produce the epitaxial silicon wafer. Vapor deposition equipment, in which the vapor deposition is conducted, at least includes a chamber, and a hydrogen-chloride-gas supply apparatus that is in communication and connected with an inside of the chamber to supply hydrogen chloride gas into the chamber. A valve that includes a diaphragm for regulating a flow of the hydrogen chloride gas from an inlet channel to an outlet channel is disposed in the hydrogen-chloride-gas supply apparatus. A W-containing Ni—Cr—Mo alloy material subjected to a passivation treatment is used for the diaphragm. When a maintenance work is to be done to the inside of the chamber, the hydrogen chloride gas is supplied from the hydrogen-chloride-gas supply apparatus into the chamber.
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