METHOD OF FORMING SEMICONDUCTOR DEVICE
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United States of America Patent
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Issued Date -
Mar 2, 2017
app pub date -
Aug 27, 2015
filing date -
Aug 27, 2015
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Abandoned
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Abstract
A method of forming a semiconductor device is disclosed. A substrate having a first area and a second area is provided. A first doped layer containing a first type of dopant is formed on the substrate only in the first area. A second doped layer containing a second type of dopant is formed on the substrate only in the second area. An annealing step is performed to drive the first type of dopant and the second type of dopant into the substrate.
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