Method for Producing a Semiconductor Device Having a Beveled Edge Termination
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United States of America Patent
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app pub date -
Nov 11, 2016
filing date -
Dec 19, 2013
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Abstract
A method for producing a semiconductor device includes forming a trench that defines a closed loop in a semiconductor body and extends from a first surface into the semiconductor body. The trench has at least one sidewall that is beveled relative to a vertical direction of the semiconductor body. The method further includes removing material of the semiconductor body at least between a bottom of the trench a second surface opposite the first surface of the semiconductor body.
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