Semiconductor Device with Contact Structures Extending Through an Interlayer and Method of Manufacturing
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United States of America Patent
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Issued Date -
Mar 2, 2017
app pub date -
Aug 26, 2016
filing date -
Aug 28, 2015
priority date (Note) -
Abandoned
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Abstract
A layer stack is formed on a main surface of a semiconductor layer, wherein the layer stack includes a dielectric capping layer and a metal layer between the capping layer and the semiconductor layer. Second portions of the layer stack are removed to form gaps between remnant first portions. Adjustment structures of a second dielectric material are formed in the gaps. An interlayer of the first or a third dielectric material is formed that covers the adjustment structures and the first portions. Contact trenches are formed that extend through the interlayer and the capping layer to metal structures formed from remnant portions of the metal layer in the first portions, wherein the capping layer is etched selectively against the auxiliary structures.
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