BAW RESONATOR HAVING MULTI-LAYER ELECTRODE AND BO RING CLOSE TO PIEZOELECTRIC LAYER
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United States of America Patent
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Issued Date -
Feb 23, 2017
app pub date -
Oct 7, 2015
filing date -
Aug 21, 2015
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Abstract
Embodiments of a Bulk Acoustic Wave (BAW) resonator having a high quality factor (Q) and methods of fabrication thereof are disclosed. In some embodiments, a BAW resonator includes a piezoelectric layer, a first electrode on a first surface of the piezoelectric layer, and a second multi-layer electrode on a second surface of the piezoelectric layer opposite the first electrode on the first surface of the piezoelectric layer. In addition, the BAW resonator includes a Border (BO) ring positioned within the second multi-layer electrode around a periphery of an active region of the BAW resonator. The BO ring is either at a position within the second multi-layer electrode between two adjacent layers of the second multi-layer electrode or at a position within the second multi-layer electrode that is adjacent to the piezoelectric layer. In this manner, the quality factor (Q) of the BAW resonator is improved.
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