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Abstract

A wimpy finFET device and method for fabricating the same is described. The device is fabricated by forming a mandrel that is non-perpendicular to long axes of the underlying fin(s) (i.e., the mandrel is formed at a non-quadrantal angle with respect to the long axes). Spacers formed on the sidewalls of the angled mandrel are thus also formed non-perpendicular to the long axes. The spacers are used to pattern underlying layer(s) down to the underlying fin(s) to form the gates for the device. Because the patterned layer(s) are also formed at a non-quadrantal angle, the width of the patterned layer(s) over the underlying fin(s) is greater than would be if the patterned layer(s) were formed at, e.g., a right angle with respect to the long axis. The desired gate length and gate pitch is respectively achieved by determining the angle at which the mandrel is formed and the mandrel width.

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First Claim