SEMICONDUCTOR DEVICE HAVING A METAL OXIDE METAL (MOM) CAPACITOR AND A PLURALITY OF SERIES CAPACITORS AND METHOD FOR FORMING
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United States of America Patent
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Issued Date -
Feb 23, 2017
app pub date -
Aug 18, 2015
filing date -
Aug 18, 2015
priority date (Note) -
Published
status (Latency Note)
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Abstract
A capacitor module includes a semiconductor substrate of a first polarity. The substrate includes a deep well of a second polarity, a first well of the first polarity over the deep well, a second well of the second polarity over at least a portion of the deep well, a first capacitor including the first well as a first electrode, a dielectric layer over the first electrode, and an electrically conductive layer as a second electrode over the dielectric layer, and a second capacitor including the second well as a first electrode, a dielectric layer over the first electrode, and an electrically conductive layer as a second electrode over the dielectric layer. The first capacitor is coupled in series with the second capacitor. A metal-oxide-metal (MOM) capacitor overlays and is coupled in parallel with the first and second capacitors.
First Claim
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