PROCESS-SPECIFIC WAFER CARRIER CORRECTION TO IMPROVE THERMAL UNIFORMITY IN CHEMICAL VAPOR DEPOSITION SYSTEMS AND PROCESSES
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United States of America Patent
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Aug 16, 2016
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Aug 18, 2015
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Improvements to the heating uniformity of a wafer carrier for a chemical vapor deposition (CVD) system can be made based on a computational thermal model built according physical and operational characteristics of the CVD system. Operation of the thermal model is simulated, where a process recipe to be carried out on the CVD system is modeled, including heat transfers taking place in the virtual CVD system, to produce a set of thermal-spatial non-uniformities in at least one region of interest of a virtual wafer carrier. Structural corrections to be made to the pocket floor of each of the at least one wafer retention pocket are determined based on the set of thermal-spatial non-uniformities and on a predefined thermal-pocket floor relation that defines at least one design rule for correcting the pocket floor to achieve an increase in thermal uniformity throughout the at least one region of interest.
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